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• W2080150678 abstract "The performance of a 193nm single layer resist based on a norbornene-malefic anhydride matrix resin has been optimized through a series of statistical design experiments. The SDE demonstrated the importance of setting the PEB temperature above the SB temperature with optimum performance being observed at a SB of 150°C and a PEB of 160°C. The lithographic performance of the resist was also strongly influenced by polymer composition, specifically acrylate loading and blocking level. Optimizing the composition of the polymer, gave resists with high etch resistance, square profiles and 0.130 micron dense line ultimate resolution in 0.5 micron thick films. The resist formulations are compatible with industry standard 0.262N TMAH. During exposure the resist does not suffer from the outgassing of volatile species (less than 1e12 molecules/cm2 x sec). A new thermally curable undercoat for bi-layer application has also been developed whose optical properties have been optimized to reduce reflectivity at the desired wavelength. The reflectivity has been reduced by a factor of eight over an earlier UV-cured version." @default.
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• W2080150678 date "1999-01-01" @default.
• W2080150678 modified "2023-10-18" @default.
• W2080150678 title "Advances in Resist Materials for 193 nm Lithography." @default.
• W2080150678 doi "https://doi.org/10.2494/photopolymer.12.423" @default.
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