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• W2080165650 abstract "A piecewise linear algorithm for predicting silicon etch rates in fluorine-based plasmas is shown. Discrete experimental data of pressure and RF power in reactive ion etching are used to construct a set of local two-dimensional etching functions that serve as a basis for computing numerical solutions (pressure and power values for a specific predicted silicon etch rate). It must be pointed out that, although the algorithm scans the entire data domain, a testing procedure is applied to ensure that the computing task will be invoked only when a solution exists, and otherwise it will be discarded (this avoids brute force methods). In the last step of the algorithm, all solutions are collected and interpolated to construct a solution path. In order to verify the match between the experimental etching results and numerical predictions, the algorithm has been coded and tested using Maple® Release 13.0, showing a successful validation with a difference between experimental data and computed numerical solutions as low as 1% for SF6, and 4% for SF6/O2 in the best case and a root-mean squared error of 0.03." @default.
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• W2080165650 date "2013-10-01" @default.
• W2080165650 modified "2023-10-14" @default.
• W2080165650 title "Prediction of silicon dry etching using a piecewise linear algorithm" @default.
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• W2080165650 doi "https://doi.org/10.1080/02533839.2012.743231" @default.
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