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- W2080186871 abstract "Abstract We report on the growth of nanocrystalline Si:H and Ge:H films. The films were grown using plasma deposition and hot wire chemical growth techniques. Conditions such as pressure, temperature and hydrogen dilution were systematically varied. It is shown that excessive hydrogen dilution during growth leads to smaller grains in nanocrystalline Si and Ge. Films with very large grains (56 nm) could be obtained using hot wire growth techniques under appropriate conditions of growth. From the data, it is concluded that the natural growth direction for the films is 〈2 2 0〉, and that excessive bonded hydrogen leads to smaller grains." @default.
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- W2080186871 date "2006-06-01" @default.
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- W2080186871 title "Growth chemistry of nanocrystalline silicon and germanium films" @default.
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- W2080186871 doi "https://doi.org/10.1016/j.jnoncrysol.2006.01.081" @default.
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