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• W2080202610 abstract "Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields χmin=3%. The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge–Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers." @default.
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• W2080202610 date "1994-10-24" @default.
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• W2080202610 title "Magnetron sputter epitaxy of Si_<i>m</i>Ge_<i>n</i>/Si(001) strained‐layer superlattices" @default.
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• W2080202610 doi "https://doi.org/10.1063/1.112766" @default.
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