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• W2080264977 abstract "We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the applied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the position of quantum-well energy levels and the value of the escape time are found. The main escape mechanism at room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization." @default.
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• W2080264977 date "2003-12-01" @default.
• W2080264977 modified "2023-09-27" @default.
• W2080264977 title "Photocarrier escape time in quantum-well light-absorbing devices: effects of electric field and well parameters" @default.
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• W2080264977 doi "https://doi.org/10.1109/jqe.2003.819527" @default.
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