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• W2080308001 abstract "Epitaxial GaAs layers have been deposited on polished Ge film grown on exactly (0 0 1) oriented Si substrate by metal-organic chemical vapor deposition (MOCVD) via aspect ratio trapping (ART) method. Double-crystal X-ray diffraction shows that the full-width at half-maximum (FWHM) of the (4 0 0) reflection obtained from 1 μm GaAs is 140 arcsec. Scanning electron microscopy (SEM) of the GaAs layer surface shows that the amount of antiphase domain defects (APD) raised from GaAs/Ge interface using Ge ART on Si is dramatically reduced compared to GaAs layers grown on exact (0 0 1) Ge substrate. Defect reduction and Ge diffusion at vicinal GaAs/Ge interface were investigated via cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectrometry (SIMS). Film morphology and optical properties were evaluated via SEM and room temperature photoluminescence (PL)." @default.
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• W2080308001 date "2009-05-01" @default.
• W2080308001 modified "2023-09-25" @default.
• W2080308001 title "Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping" @default.
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• W2080308001 doi "https://doi.org/10.1016/j.jcrysgro.2009.03.018" @default.
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