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- W2080314057 abstract "Abstract Most semiconductor crystals are transparent to infrared radiation. Using infrared radiation, it is possible to observe the liquid/solid interface from the bottom side of the substrate during the process of LPE growth of semiconductor crystals. The in-situ observation technique, which was developed in the present investigations, successfully gives clear images of morphological variations during the LPE GaP crystal growth process." @default.
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- W2080314057 date "1990-01-01" @default.
- W2080314057 modified "2023-10-16" @default.
- W2080314057 title "Direct observation of LPE growth in GaP" @default.
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- W2080314057 doi "https://doi.org/10.1016/0022-0248(90)90497-9" @default.
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