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- W2080337522 abstract "This paper presents a D-band PA on 28nm CMOS demonstrating excellent gain power dissipation and bandwidth tradeoffs. It features above 10 dB gain in the frequency range 95–140 GHz while drawing 30 mA from a 1.1-V supply and 0dBm P1dB & 7dBm saturation power. The use of low K transformers enables an increase in PA BW without power and area penalty. A modified transistor core layout boosts PA gain by 0.5dB per stage. PA die area with pads is 0.55×0.4 mm2 and without pads 0.4×0.2 mm2." @default.
- W2080337522 created "2016-06-24" @default.
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- W2080337522 date "2014-12-01" @default.
- W2080337522 modified "2023-09-24" @default.
- W2080337522 title "A wideband 95–140 GHz high efficiency PA in 28nm CMOS" @default.
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- W2080337522 doi "https://doi.org/10.1109/eeei.2014.7005799" @default.
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