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- W2080338144 abstract "Silicon oxynitride has become an interesting alternative to silicon dioxide for use as a gate dielectric. Typically, these oxynitride films are formed by thermally growing the dielectric with a N2O gas source or by performing a post-oxidation anneal in ammonia [1,2]. Both of these techniques increase the thermal budget requirement because of the slower growth rate in N2O and the extra high temperature process step required for the thermal nitridation. In this work, the properties of both n-channel and p-channel transistors with oxynitride gate dielectrics formed using a low pressure, rapid thermal chemical vapor deposition (RTCVD) process is presented." @default.
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- W2080338144 date "1995-06-01" @default.
- W2080338144 modified "2023-09-25" @default.
- W2080338144 title "N-channel and p-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition" @default.
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- W2080338144 doi "https://doi.org/10.1016/0167-9317(95)00057-f" @default.
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