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• W2080341746 endingPage "185107" @default.
• W2080341746 startingPage "185107" @default.
• W2080341746 abstract "Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (?c-SiO?:?H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170??C) as an alternative to amorphous silicon (a-Si?:?H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-?c-SiO?:?H films prepared for the emitter layer are dark conductivity = 0.51?S?cm?1 at 20?nm thin film, activation energy = 23?meV and E04 = 2.3?eV. Czochralski-grown 380??m thick p-type 1?0?0 oriented polished silicon wafers with a resistivity of 1?10???cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be Voc = 620?mV, Jsc = 32.1?mA?cm?2, FF = 0.77, ? = 15.32% (active area efficiency)." @default.
• W2080341746 created "2016-06-24" @default.
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• W2080341746 date "2008-08-29" @default.
• W2080341746 modified "2023-09-26" @default.
• W2080341746 title "Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter" @default.
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• W2080341746 doi "https://doi.org/10.1088/0022-3727/41/18/185107" @default.
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