Matches in SemOpenAlex for { <https://semopenalex.org/work/W2080355540> ?p ?o ?g. }
- W2080355540 endingPage "015501" @default.
- W2080355540 startingPage "015501" @default.
- W2080355540 abstract "The electronic structure and magnetic properties of GeTe-based dilute magnetic semiconductors (DMS) are investigated by the Korringa–Kohn–Rostoker Green's function method and the projector augmented wave method. Our calculations for the formation energies of transition metal impurities (TM) in GeTe indicate that the solubilities of TM are quite high compared to typical III–V and II–VI based DMS and that the TM doped GeTe has a possibility of room temperature ferromagnetism with high impurity concentrations. The high solubilities originate from the fact that the top of the valence bands of GeTe consists of the Te-5p anti-bonding states which are favorable to acceptor doping. (Ge, Cr)Te system shows strong ferromagnetic interaction by the double exchange mechanism and is a good candidate for DMS with high Curie temperature. Additionally, in the case of (Ge, Mn)Te with the d5 configuration, by introducing the Ge vacancies the p-d exchange interaction is activated and it dominates the antiferromagnetic superexchange, resulting in ferromagnetic exchange interactions between Mn. This explains recent experimental results reasonably. Based on the accurate estimation of the Curie temperatures by Monte Carlo simulation for the classical Heisenberg model with the calculated exchange coupling constants, we discuss the relevance of the TM doped GeTe for semiconductor spintronics." @default.
- W2080355540 created "2016-06-24" @default.
- W2080355540 creator A5000765542 @default.
- W2080355540 creator A5037025308 @default.
- W2080355540 creator A5040546892 @default.
- W2080355540 creator A5046968370 @default.
- W2080355540 creator A5060070406 @default.
- W2080355540 creator A5078003161 @default.
- W2080355540 date "2014-11-27" @default.
- W2080355540 modified "2023-10-16" @default.
- W2080355540 title "First principles studies of GeTe based dilute magnetic semiconductors" @default.
- W2080355540 cites W1602107332 @default.
- W2080355540 cites W1607312466 @default.
- W2080355540 cites W1623647921 @default.
- W2080355540 cites W1628260180 @default.
- W2080355540 cites W1671395130 @default.
- W2080355540 cites W1970676587 @default.
- W2080355540 cites W1971821930 @default.
- W2080355540 cites W1977357586 @default.
- W2080355540 cites W1979803666 @default.
- W2080355540 cites W1980348764 @default.
- W2080355540 cites W1981368803 @default.
- W2080355540 cites W1981557191 @default.
- W2080355540 cites W1981783962 @default.
- W2080355540 cites W1984294540 @default.
- W2080355540 cites W1985235369 @default.
- W2080355540 cites W1986263558 @default.
- W2080355540 cites W1987482829 @default.
- W2080355540 cites W1989594510 @default.
- W2080355540 cites W1991388146 @default.
- W2080355540 cites W1999321619 @default.
- W2080355540 cites W2008296194 @default.
- W2080355540 cites W2010796603 @default.
- W2080355540 cites W2012123840 @default.
- W2080355540 cites W2014356248 @default.
- W2080355540 cites W2015750026 @default.
- W2080355540 cites W2016577825 @default.
- W2080355540 cites W2018114878 @default.
- W2080355540 cites W2018679302 @default.
- W2080355540 cites W2019930784 @default.
- W2080355540 cites W2025786333 @default.
- W2080355540 cites W2030976617 @default.
- W2080355540 cites W2032128469 @default.
- W2080355540 cites W2032843489 @default.
- W2080355540 cites W2033393438 @default.
- W2080355540 cites W2039003970 @default.
- W2080355540 cites W2054199752 @default.
- W2080355540 cites W2054232405 @default.
- W2080355540 cites W2060568456 @default.
- W2080355540 cites W2066101454 @default.
- W2080355540 cites W2068442679 @default.
- W2080355540 cites W2070059498 @default.
- W2080355540 cites W2070209799 @default.
- W2080355540 cites W2073668092 @default.
- W2080355540 cites W2073977343 @default.
- W2080355540 cites W2074152003 @default.
- W2080355540 cites W2075958937 @default.
- W2080355540 cites W2083222334 @default.
- W2080355540 cites W2083252276 @default.
- W2080355540 cites W2090838661 @default.
- W2080355540 cites W2097440288 @default.
- W2080355540 cites W2126126756 @default.
- W2080355540 cites W2146693864 @default.
- W2080355540 cites W2150228292 @default.
- W2080355540 cites W2230728100 @default.
- W2080355540 cites W2315213192 @default.
- W2080355540 cites W2318222845 @default.
- W2080355540 cites W4300351786 @default.
- W2080355540 doi "https://doi.org/10.1088/0953-8984/27/1/015501" @default.
- W2080355540 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/25427963" @default.
- W2080355540 hasPublicationYear "2014" @default.
- W2080355540 type Work @default.
- W2080355540 sameAs 2080355540 @default.
- W2080355540 citedByCount "16" @default.
- W2080355540 countsByYear W20803555402015 @default.
- W2080355540 countsByYear W20803555402016 @default.
- W2080355540 countsByYear W20803555402017 @default.
- W2080355540 countsByYear W20803555402018 @default.
- W2080355540 countsByYear W20803555402019 @default.
- W2080355540 countsByYear W20803555402020 @default.
- W2080355540 countsByYear W20803555402023 @default.
- W2080355540 crossrefType "journal-article" @default.
- W2080355540 hasAuthorship W2080355540A5000765542 @default.
- W2080355540 hasAuthorship W2080355540A5037025308 @default.
- W2080355540 hasAuthorship W2080355540A5040546892 @default.
- W2080355540 hasAuthorship W2080355540A5046968370 @default.
- W2080355540 hasAuthorship W2080355540A5060070406 @default.
- W2080355540 hasAuthorship W2080355540A5078003161 @default.
- W2080355540 hasConcept C108225325 @default.
- W2080355540 hasConcept C121332964 @default.
- W2080355540 hasConcept C125938697 @default.
- W2080355540 hasConcept C14179194 @default.
- W2080355540 hasConcept C155355069 @default.
- W2080355540 hasConcept C168900304 @default.
- W2080355540 hasConcept C174771821 @default.
- W2080355540 hasConcept C178790620 @default.
- W2080355540 hasConcept C185592680 @default.
- W2080355540 hasConcept C192562407 @default.