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- W2080402999 abstract "We report about a process that enables us to manufacture nm-sized structures that are characterized in a four-point resistivity measurement. To define the nanostructures, we employ either a lift-off deposition process or a dry etching process. With the lift-off deposition, we were able to define line widths below 15 nm spatial dimension. The same technique allowed the fabrication of a current-carrying bridge with ≈30 nm × 10 nm cross section. The etch-process step allowed us to generate a superconducting meander structure covering an area of ≈13.5 μm × 10.5 μm. We also present critical-current measurements vs. temperature on sub-μm and μm sized bridges prepared by a different technique. These data support the idea of a geometrical edge barrier for vortex entry into sub-μm wide bridges." @default.
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- W2080402999 date "2008-04-01" @default.
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- W2080402999 title "Fabrication of metallic structures with lateral dimensions less than 15 nm and <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si6.gif overflow=scroll><mml:mrow><mml:msub><mml:mrow><mml:mi>j</mml:mi></mml:mrow><mml:mrow><mml:mtext>c</mml:mtext></mml:mrow></mml:msub><mml:mo stretchy=false>(</mml:mo><mml:mi>T</mml:mi><mml:mo stretchy=false>)</mml:mo></mml:mrow></mml:math>-measurements in NbN micro- and nanobridges" @default.
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- W2080402999 doi "https://doi.org/10.1016/j.physc.2007.11.049" @default.
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