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- W2080453485 abstract "Lattice distortion in GaAsP layers has been studied using high-resolution X-ray diffractometry. GaAsP layers were grown on GaP and Si substrates by metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEGa), tertiarybutylarsine (TBAs) and phosphine (PH 3 ) as source gases. The lattice constants of epitaxial layers were obtained from the results of X-ray (004) and (115) diffraction. The lattice constant parallel to the growth surface ( a || ) was longer than the one perpendicular to the surface ( a ⊥ ). The GaAsP epi-layer was two-dimensionally strained in the growth plane. This is explained by the difference of thermal expansion coefficients. The distortion in the GaAsP epi-layers on a GaP substrate was smaller than that on a Si substrate." @default.
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- W2080453485 date "2001-03-01" @default.
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- W2080453485 title "Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy" @default.
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- W2080453485 doi "https://doi.org/10.1143/jjap.40.1377" @default.
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