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• W2080454450 startingPage "2078" @default.
• W2080454450 abstract "Measurements of Hall coefficient, dc conductivity, and magnetoresistances have been made on highly compensated, undeformed $n$-type InSb samples from liquid helium to room temperature. The measurements show that the extent of the impurity-band conduction depends considerably on the compensation ratio and the effective concentration of the carriers. Two activation energies have been identified in the impurity-conduction region. The magnetoresistance at 4.2 K is due to impurity-band conduction and is found to be positive. It shows approximately a square-law dependence on a magnetic field. The observed behavior of magnetoresistance at 300 and 77.4 K is consistent with the behavior expected for free electrons. The variation of $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ with temperature in the range 4.2---300 K at 0.3 kG is essentially governed by the variation of ${ensuremath{mu}}_{H}$ in the same temperature range." @default.
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• W2080454450 date "1983-08-15" @default.
• W2080454450 modified "2023-09-26" @default.
• W2080454450 title "Electron transport in highly compensated, undeformedn-type InSb in the temperature range 4.2—300 K" @default.
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• W2080454450 doi "https://doi.org/10.1103/physrevb.28.2078" @default.
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