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- W2080490445 abstract "Antimony and phosphorus spin-on sources were developed and the different structures were characterised. The effect of different ambients on the diffusion of both the elements into silicon was investigated. It was observed that in N2 ambient, Sb2O3 was reduced and SiO2 formed at the interface reduced the diffusion of Sb into silicon. In O2 ambient, at 1200°C, the oxidation rate of the Si surface competes with the diffusion process resulting in lower surface concentration. Increase in prebaking temperature was found to increase the sheet resistance of antimony diffused samples. From thermo-dynamic calculations it is shown that there is a greater probability for the reduction of Sb2O3 at lower temperatures than at higher temperatures." @default.
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- W2080490445 date "1970-05-01" @default.
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- W2080490445 title "Observations of EE dislocations using Sirtl etchant and their influence on transistor parameters" @default.
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- W2080490445 doi "https://doi.org/10.1016/0038-1101(70)90148-6" @default.
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