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- W2080498765 abstract "N-ZnO/P-CuI heterojunctions are fabricated by growing undoped n-type ZnO thin films on p-type <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$gamma$</tex></formula> -CuI (111) single-crystal substrates using radio-frequency magnetron sputtering. The ZnO films are identified to be columnar structured with <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$c$</tex></formula> -axis-preferred orientation by using X-ray diffraction and scanning electron microscope. Measurements of the energy band alignment of ZnO/CuI interface by using X-ray photoelectron spectroscopy result in a valence band offset of 1.74 eV and a conduction band offset of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$-$</tex></formula> 1.37 eV, meaning a type-II band alignment at the interface. A typical diodelike behavior of the current–voltage curve indicates its possible applications in optoelectronics with further development." @default.
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- W2080498765 date "2012-12-01" @default.
- W2080498765 modified "2023-09-26" @default.
- W2080498765 title "Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction" @default.
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- W2080498765 doi "https://doi.org/10.1109/led.2012.2218274" @default.
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