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• W2080498812 abstract "Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films." @default.
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• W2080498812 date "2001-06-04" @default.
• W2080498812 modified "2023-10-14" @default.
• W2080498812 title "Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces" @default.
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• W2080498812 doi "https://doi.org/10.1063/1.1377309" @default.
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