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- W2080506095 abstract "BaTiO/sub 3/ thin films were prepared on Pt(100)/SiO/sub 2//Si(100) substrates by RF sputtering, whose structural, crystallographic, and electrical properties were examined according to the deposition conditions and annealing temperatures. The optimal Ar/O/sub 2/ gas flow rate, sputtering pressure, RF power and annealing temperature were 4/1, 12[mTorr], 120[W] and 650[/spl deg/C] for 1[hr], respectively. From the results of X-ray diffraction (XRD) and D-E hysteresis characteristics, BaTiO/sub 3/ thin films deposited at the optimal conditions showed a ferroelectric phase. The growth rate of deposited film was about 0.75[/spl Aring//sec], and the dielectric constant and dielectric loss were about 683 and 0.05, respectively." @default.
- W2080506095 created "2016-06-24" @default.
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- W2080506095 date "2002-11-22" @default.
- W2080506095 modified "2023-09-28" @default.
- W2080506095 title "A study on the properties and fabrication of BaTiO/sub 3/ thin films by the RF sputtering" @default.
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- W2080506095 doi "https://doi.org/10.1109/icpadm.1997.616618" @default.
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