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• W2080544890 abstract "Glide in elemental semiconductors or III–V compounds takes place by dissociated 1/2〈110〉 dislocations on {111} glide planes. Structural models and valence force calculations suggest that the cores of the basic partial dislocation may be reconstructed. Kinks may be reconstructed or have dangling bonds. The former will be associated with fairly shallow levels, the latter with deep acceptor and donor levels in the bandgap. Deep–level transient spectroscopy, electrical, optical, and electron paramagnetic resonance data give information on energy levels and concentrations of dangling bonds and deep levels, but the identification with particular sites on the dislocations is very difficult. The electronic states also lead to the dislocations acting as recombination centres, and give rise to photoplastic effects. There are strong interactions with impurities, which have a profound effect on the electronic properties. Dislocation velocities at relatively low temperatures are controlled by the Peierls force, and motion occurs by the generation and motion of double kinks. There is a pronounced dependence of dislocation velocity on doping, for both elemental semiconductors and III–V compounds. A recent theory attributes the doping effect to a dependence of the concentration of charged dangling bond kinks on the Fermi level, and of the kink velocity on the charge state. The doping effect is also reflected in mechanical properties, for example the variation of yield stress with temperature, rosette diameters, and radial cracking behaviour around hardness indentations, and values of hardness. In III–V compounds different mobilities of α– and β–dislocations give rise to anisotropies in hardness, rosette configurations, and associated cracking, and for {111} indentations different hardness values, slip patterns, and cracking behaviour result on the group III and V crystal faces.MST/269" @default.
• W2080544890 created "2016-06-24" @default.
• W2080544890 creator A5029767932 @default.
• W2080544890 date "1985-09-01" @default.
• W2080544890 modified "2023-09-26" @default.
• W2080544890 title "Dislocations in semiconductors" @default.
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• W2080544890 doi "https://doi.org/10.1179/mst.1985.1.9.666" @default.
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