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• W2080584413 abstract "In cluster ion beam processes, multiple collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally non-linear processes in a low-energy regime. The gas cluster ion beam process has been applied to produce ultra-shallow junctions (less than 7 nm in Si at 2 keV), very high-rate sputtering (more than two orders of magnitude higher than by monomer ions having the same energy), atomic scale smoothing of surfaces (to average roughness less than 0.2 nm) and reactive thin film formation at low substrate temperatures. This paper will review recent requirements for ion beam processing and the status of ion beam equipment development. Several characteristics of the gas-cluster ion beam processing are capable of meeting these recent requirements and will be demonstrated by our recent experimental and molecular dynamics simulation results." @default.
• W2080584413 created "2016-06-24" @default.
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• W2080584413 date "1999-01-01" @default.
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• W2080584413 title "Low-energy cluster ion beam modification of surfaces" @default.
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• W2080584413 doi "https://doi.org/10.1016/s0168-583x(98)00875-1" @default.
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