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- W2080585969 abstract "Abstract Cu(In,Ga)(S,Se) 2 thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe 2 , CuInSe 2 , In 2 Se 3 and Ga 2 Se 3 compounds and then annealing in H 2 S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se) 2 thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated V oc =535 mV, I sc =13.3 mA/cm 2 , FF=0.61 and efficiency=4.34% without AR-coating." @default.
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- W2080585969 date "2011-01-01" @default.
- W2080585969 modified "2023-09-26" @default.
- W2080585969 title "Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere" @default.
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- W2080585969 doi "https://doi.org/10.1016/j.solmat.2010.05.011" @default.
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