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- W2080647435 abstract "We report the reproducible fabrication of sub-10 nm lines by conventional 200 kV electron-beam lithography and lift-off of a granular gold film on polymethylmethacrylate resit. We show that when the linewidth is smaller than 7 nm only one metallic grain can be formed in the width of the lines opened in the resist. The lines consisting of a chain of 5–7 nm grains separated by 1–2 nm, have thus been called monogranular lines. We demonstrate that these lines can be easily inserted between metallic electrodes to produce single electron devices. Moreover, the realization of very regular features at a sub-10 nm dimension range by a lift-off technique, sheds some light on the limitations usually encountered in the fabrication of continuous sub-10 nm metallic lines by lift-off." @default.
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- W2080647435 date "1997-02-01" @default.
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- W2080647435 title "Sub-10 nm monogranular metallic lines formed by 200 kV electron-beam lithography and lift-off in polymethylmethacrylate resist" @default.
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- W2080647435 doi "https://doi.org/10.1016/s0167-9317(96)00109-8" @default.
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