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• W2080680965 abstract "An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility." @default.
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• W2080680965 date "2010-03-04" @default.
• W2080680965 modified "2023-10-17" @default.
• W2080680965 title "Investigation of InN layers grown by molecular beam epitaxy on GaN templates" @default.
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• W2080680965 doi "https://doi.org/10.1002/pssa.200983117" @default.
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