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- W2080692809 abstract "Abstract The rectification behaviour of an amorphous semiconductor Se 32 Te 32 As 4 Ge 32 thin film sandwich device with two different metal electrodes was observed and studied experimentally. The appropriate electrode combination to obtain the best rectification is to use aluminium as the bottom and gold as the top electrode. The rectification ratio is increased with decreasing amorphous film thickness and with increasing applied voltage. The rise of the ambient temperature leads to a remarkable increase in the rectification ratio. The transition voltage of a diode characteristic rises with increasing amorphous film thickness (above this transition voltage the characteristic deviates from the ohmic law)." @default.
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- W2080692809 date "1981-04-01" @default.
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- W2080692809 title "Rectification behaviour of the amorphous semiconductor Se32Te12As4Ge32" @default.
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- W2080692809 doi "https://doi.org/10.1016/0040-6090(89)90587-7" @default.
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