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• W2080730404 startingPage "015701" @default.
• W2080730404 abstract "We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices." @default.
• W2080730404 created "2016-06-24" @default.
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• W2080730404 date "2011-12-19" @default.
• W2080730404 modified "2023-09-25" @default.
• W2080730404 title "Formation of Tensilely Strained Germanium-on-Insulator" @default.
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• W2080730404 doi "https://doi.org/10.1143/apex.5.015701" @default.
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