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• W2080766063 abstract "Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 °C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping." @default.
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• W2080766063 date "2012-02-01" @default.
• W2080766063 modified "2023-10-14" @default.
• W2080766063 title "Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films" @default.
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• W2080766063 doi "https://doi.org/10.1016/j.tsf.2011.12.014" @default.
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