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• W2080806132 abstract "We present a combined scanning tunneling microscopy (STM) and low-temperature magnetotransport study of Si:P δ-doped layers on vicinal Si(001) substrates. The substrates were misoriented 4° toward [110] resulting in a high step density on the starting growth surface. Atomically resolved STM was used to study all stages of the fabrication. We find only a weak influence of the high step density and discuss the implications for the fabrication δ-doped layers and planar nanoscale Si:P devices by scanning tunneling lithography." @default.
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• W2080806132 date "2008-09-15" @default.
• W2080806132 modified "2023-09-27" @default.
• W2080806132 title "Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001)" @default.
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• W2080806132 doi "https://doi.org/10.1063/1.2977750" @default.
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