Matches in SemOpenAlex for { <https://semopenalex.org/work/W2080821669> ?p ?o ?g. }
Showing items 1 to 77 of
77
with 100 items per page.
- W2080821669 endingPage "658" @default.
- W2080821669 startingPage "656" @default.
- W2080821669 abstract "Epitaxial silicon layers are grown on GaAs substrates in a light-assisted cold wall horizontal reactor. High quality silicon is obtained at the surface when the growth is conducted in a two-step sequence. The first step is a silane exposure at 700 °C where epitaxial silicon starts to grow and where tensile stress relaxes to form a highly defective layer. The second step is an epitaxial growth of silicon at 800 °C. The crystalline perfection and stress in both the layer and the substrate are characterized by Raman scattering. Cross-section transmission electron microscopy analysis shows mainly the formation of stacking faults at the interface. Their number reduces as the Si film thickness increases. The rapid thermal chemical vapor deposition does not require arsenic overpressure to protect the GaAs substrate from thermal degradation during epitaxial growth." @default.
- W2080821669 created "2016-06-24" @default.
- W2080821669 creator A5009877790 @default.
- W2080821669 creator A5010221495 @default.
- W2080821669 creator A5013019405 @default.
- W2080821669 creator A5054508582 @default.
- W2080821669 creator A5073841308 @default.
- W2080821669 creator A5088361118 @default.
- W2080821669 date "1991-08-05" @default.
- W2080821669 modified "2023-10-17" @default.
- W2080821669 title "Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process" @default.
- W2080821669 cites W1977726569 @default.
- W2080821669 cites W2006989770 @default.
- W2080821669 cites W2039007373 @default.
- W2080821669 cites W2041065845 @default.
- W2080821669 cites W2051157088 @default.
- W2080821669 cites W2068785111 @default.
- W2080821669 cites W2079595667 @default.
- W2080821669 doi "https://doi.org/10.1063/1.105383" @default.
- W2080821669 hasPublicationYear "1991" @default.
- W2080821669 type Work @default.
- W2080821669 sameAs 2080821669 @default.
- W2080821669 citedByCount "3" @default.
- W2080821669 crossrefType "journal-article" @default.
- W2080821669 hasAuthorship W2080821669A5009877790 @default.
- W2080821669 hasAuthorship W2080821669A5010221495 @default.
- W2080821669 hasAuthorship W2080821669A5013019405 @default.
- W2080821669 hasAuthorship W2080821669A5054508582 @default.
- W2080821669 hasAuthorship W2080821669A5073841308 @default.
- W2080821669 hasAuthorship W2080821669A5088361118 @default.
- W2080821669 hasConcept C110738630 @default.
- W2080821669 hasConcept C111368507 @default.
- W2080821669 hasConcept C127313418 @default.
- W2080821669 hasConcept C146088050 @default.
- W2080821669 hasConcept C159985019 @default.
- W2080821669 hasConcept C171250308 @default.
- W2080821669 hasConcept C192562407 @default.
- W2080821669 hasConcept C2777289219 @default.
- W2080821669 hasConcept C2778024649 @default.
- W2080821669 hasConcept C2779227376 @default.
- W2080821669 hasConcept C49040817 @default.
- W2080821669 hasConcept C544956773 @default.
- W2080821669 hasConcept C57410435 @default.
- W2080821669 hasConceptScore W2080821669C110738630 @default.
- W2080821669 hasConceptScore W2080821669C111368507 @default.
- W2080821669 hasConceptScore W2080821669C127313418 @default.
- W2080821669 hasConceptScore W2080821669C146088050 @default.
- W2080821669 hasConceptScore W2080821669C159985019 @default.
- W2080821669 hasConceptScore W2080821669C171250308 @default.
- W2080821669 hasConceptScore W2080821669C192562407 @default.
- W2080821669 hasConceptScore W2080821669C2777289219 @default.
- W2080821669 hasConceptScore W2080821669C2778024649 @default.
- W2080821669 hasConceptScore W2080821669C2779227376 @default.
- W2080821669 hasConceptScore W2080821669C49040817 @default.
- W2080821669 hasConceptScore W2080821669C544956773 @default.
- W2080821669 hasConceptScore W2080821669C57410435 @default.
- W2080821669 hasIssue "6" @default.
- W2080821669 hasLocation W20808216691 @default.
- W2080821669 hasOpenAccess W2080821669 @default.
- W2080821669 hasPrimaryLocation W20808216691 @default.
- W2080821669 hasRelatedWork W1966810442 @default.
- W2080821669 hasRelatedWork W1982635368 @default.
- W2080821669 hasRelatedWork W2027678411 @default.
- W2080821669 hasRelatedWork W2047621091 @default.
- W2080821669 hasRelatedWork W2055754760 @default.
- W2080821669 hasRelatedWork W2079270301 @default.
- W2080821669 hasRelatedWork W2139871202 @default.
- W2080821669 hasRelatedWork W2158021730 @default.
- W2080821669 hasRelatedWork W858177076 @default.
- W2080821669 hasRelatedWork W4301374553 @default.
- W2080821669 hasVolume "59" @default.
- W2080821669 isParatext "false" @default.
- W2080821669 isRetracted "false" @default.
- W2080821669 magId "2080821669" @default.
- W2080821669 workType "article" @default.