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• W2080842014 abstract "Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films." @default.
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• W2080842014 date "2010-05-01" @default.
• W2080842014 modified "2023-10-11" @default.
• W2080842014 title "Electrical and structural properties of Al-doped ZnO films" @default.
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• W2080842014 doi "https://doi.org/10.1109/iwjt.2010.5475011" @default.
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