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- W2080855665 abstract "Variations in manufacturing process introduce uncertainties optical proximity correction. Discrepanciesmay arise between model extraction and the actual manufacturing conditions. An optimally constructedmask should minimize the sensitivity ofline width variation in lithography and prevent pattern failure sucha line pinch-off. In this paper, the effect ofdefocus on OPC mask and wafer patterning is investigated usinga physical pattern transfer simulator, LithoScopeTM. We evaluate the impact of defocus on a set of specialtest patterns and on a real circuit layout. We propose to control defocus effect by a combination of properdesign centering and physical model-based data verification.Keywords: Photolithography, Mask, Simulation, OPC, Layout verification" @default.
- W2080855665 created "2016-06-24" @default.
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- W2080855665 date "2003-12-15" @default.
- W2080855665 modified "2023-09-23" @default.
- W2080855665 title "Focus latitude optimization for model-based OPC" @default.
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- W2080855665 doi "https://doi.org/10.1117/12.517996" @default.
- W2080855665 hasPublicationYear "2003" @default.
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