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• W2080865035 abstract "Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation." @default.
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• W2080865035 date "1982-08-01" @default.
• W2080865035 modified "2023-09-25" @default.
• W2080865035 title "Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies" @default.
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• W2080865035 doi "https://doi.org/10.1016/0040-6090(82)90507-7" @default.
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