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• W2080884873 abstract "Electrical resistivity and thermoelectric power (T.E.P.) measurements were performed on iodine-doped selenium thin films between 80 and 450 K. The films, whose thicknesses ranged from 500 to 15000nm, are found to be p-type. The electrical resistivity is governed by hopping conduction in the low temperature range (80–190 K) and by grain boundary scattering mechanisms at higher temperatures. A local resistivity maximum occurs at about 380 K. This effect increases, together with the room temperature conductivity, with the annealing temperature. These phenomena can be explained by a structural change of the grain boundaries induced by the iodine content." @default.
• W2080884873 created "2016-06-24" @default.
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• W2080884873 date "1989-01-01" @default.
• W2080884873 modified "2023-10-17" @default.
• W2080884873 title "Electrical properties of iodine-doped selenium films" @default.
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• W2080884873 doi "https://doi.org/10.1016/0022-3697(89)90027-9" @default.
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