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- W2080932544 abstract "Ac and dc conductivity, tunneling, and optical transmission and reflectance studies have been made on amorphous and crystalline (rhombohedral and NaCl) GeTe films (80 Å to 10 μ thick) prepared by evaporation and by sputtering. The crystalline films behave like a p-type degenerate semiconductor with Fermi level ∼0.3–0.5 eV in the valence band, resistivity ∼10−4 Ω cm, carrier concentration ∼1020 to 1021/cm3, Hall mobility ∼25–120 cm2/V sec, and a small, positive (metallic) temperature coefficient of resistivity. Amorphous films show a high resistivity which increases exponentially from ∼103 to >1010 Ω cm as the temperature decreases from 300–77 K, corresponding to an activation energy of 0.3–0.4 eV. The ac conductivity increases as ωn(n < 1) to approach a constant value above ω = 90 kc. Simultaneously, the activation energy for conduction decreases continuously to a nearly zero value. The conductivity also increases rapidly as a high power of the electric field at >104 V/ cm. The near infrared indices of amorphous and crystalline structures are 4.0 and 5.6, respectively. The optical absorption edge is nearly the same (∼0.8 eV) for the crystalline and amorphous films. A tentative explanation of the transport behavior of amorphous films is possible in terms of conduction by two parallel mechanisms: (a) in the conduction band by intrinsically excited carriers, and (b) by a hopping process in the trap-like localized levels above the Fermi level in the valence band." @default.
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- W2080932544 date "1969-07-01" @default.
- W2080932544 modified "2023-10-16" @default.
- W2080932544 title "Electrical and Optical Properties of Amorphous vs Crystalline GeTe Films" @default.
- W2080932544 doi "https://doi.org/10.1116/1.1315683" @default.
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