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• W2080990172 abstract "Abstract Transient photovoltaic decay (PVD) measurements on polycrystalline p-Si/ITO and single crystal p-Si/ITO solar cells were performed. A faster initial PVD rate, which means a shorter effective lifetime (τ eff ) (300–400 ns), was found in p-Si/ITO junctions, while in a single crystal Si/ITO junction τ eff was 5 μs. The shorter lifetime of the injected carriers is one of the reasons for the lower conversion efficiency of these cells. The effect of wavelength on the photovoltage was also observed using different light sources. High intensity short wavelength excitation (N2 laser) gave a lower V OC and a faster PVD rate because of high absorption close to the surface." @default.
• W2080990172 created "2016-06-24" @default.
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• W2080990172 date "1985-09-01" @default.
• W2080990172 modified "2023-09-27" @default.
• W2080990172 title "Transient photovoltaic phenomenaof ITO/Si junctions" @default.
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• W2080990172 doi "https://doi.org/10.1016/0165-1633(85)90054-1" @default.
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