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• W2081092783 abstract "A simple and effective means for passivating crystalline silicon is reported by the use of free-radical polymerization (FRP) to directly graft polymer chains to a hydride-terminated surface (Si−H). Complete surface coverage and passivation was achieved in approximately 24 h at 60 °C or 30 min at 90 °C. Mechanistic studies determined that chain attachment followed a hydride-transfer-based grafting-to mechanism. The grafting process is compatible with a variety of monomers and was used to assemble polymer brush layers (2−12 nm thick), with grafting densities ranging from 0.02 to 0.65 chains/nm2 rivaling densities typically obtained by grafting-from scenarios. This new passivation route provides a uniquely accessible means to covalently anchor dense polymer brushes to silicon surfaces without the need for functionalization of the polymer chain ends or the substrate." @default.
• W2081092783 created "2016-06-24" @default.
• W2081092783 creator A5011043037 @default.
• W2081092783 creator A5089769014 @default.
• W2081092783 date "2009-05-18" @default.
• W2081092783 modified "2023-09-25" @default.
• W2081092783 title "Direct Passivation of Hydride-Terminated Silicon (100) Surfaces by Free-Radically Tethered Polymer Brushes" @default.
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• W2081092783 doi "https://doi.org/10.1021/la900795d" @default.
• W2081092783 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/19449816" @default.
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