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- W2081178451 abstract "Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Severalchallenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scalingmay suggest a transition to shorter EUVL wavelengths, several issues arise that would make that difficult. Challengesinvolve issues such as flare, multilayer (ML) bandwidth, and reflector throughput which tend to worsen with decreasingwavelength. In this study, we have evaluated the tradeoff between flare scaling effects and diffractive scaling effects forEUVL, where flare induced image degradation is likely to dominate as sub-13.5 nm wavelengths are considered. Withsurface scatter effects scaling as 1/λ2, the idea of longer wavelength (LW-EUVL) becomes interesting. Since a workingwavelength is driven by the selection of ML materials (which are molybdenum and silicon for 13.5 nm), theidentification of suitable alternatives is an initial challenge. We have optimized aluminum and various refractory metalsat 17.2 nm and present results. The optimized combination of aluminum with yttrium, zirconium, and other metals resultin theoretical reflectivity values above 75%. We also describe possibilities for alternative LW-EUVL sources for17.2 nm operation as well as the impact on resist absorption, especially through halogens of higher molar absorption(such as fluorine). The impact on mask absorber materials is also presented, which may also exhibit increasedabsorbance, leading to a lowering of film thickness requirements." @default.
- W2081178451 created "2016-06-24" @default.
- W2081178451 creator A5022838965 @default.
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- W2081178451 date "2012-03-29" @default.
- W2081178451 modified "2023-09-23" @default.
- W2081178451 title "Longer wavelength EUV lithography (LW-EUVL)" @default.
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- W2081178451 doi "https://doi.org/10.1117/12.917912" @default.
- W2081178451 hasPublicationYear "2012" @default.
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