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- W2081216537 abstract "Using sine wave modulated laser excitation, the optical phase shift of the luminescence of vapor grown Zn doped GaAs1−xPx layers was measured. From such measurements the minority carrier lifetime can be derived. This lifetime was measured as a function of doping level for crystals with a composition sufficiently remote from the crossover composition (0.30 < × < 0.35) to ascertain that only a small fraction of the minority carriers is in the indirect minima. In addition, luminescence efficiency measurements were made using cathode ray excitation. From the lifetime and efficiency results it is concluded that for p < 2 × 1019 cm−3 the lifetime, being between 1 and 3 ns, is dominated by nonradiative transitions. For the radiative transitions a rate constant of 4.5 × 10−11 cm3 s−1 was determined. This value compares reasonably well with values known for GaAs, about 7 × 10−11 cm3 s−1. The efficiency of a few strongly doped samples (p > 1019 cm−3) may be depressed by self-absorption of the luminescence. In addition, a few samples with a higher phosphorus content, up to x = 0.45, were measured. Their lifetimes being mainly determined by indirect transitions are also in the low nanosecond range. This stands in contrast with the longer lifetimes (up to 150 ns at p < 1017 cm−3) of indirect bandgap material (x ≈ 0.8)." @default.
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- W2081216537 date "1976-01-01" @default.
- W2081216537 modified "2023-09-23" @default.
- W2081216537 title "Room temperature minority carrier lifetime and efficiency of p-type GaAs1—xPx" @default.
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- W2081216537 doi "https://doi.org/10.1016/s0022-2313(76)90312-4" @default.
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