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- W2081234023 abstract "ABSTRACT InP substrates with 40nm metal films of Pt were encapsulated in SiO 2 , and isochronally annealed up to 600°C in flowing forming gas. The composition and morphology of the phases that formed were studied using x-ray diffraction, Rutherford Backscattering, and transmission electron microscopy. Results show that the Pt/InP system begins interacting at 300°C. TEM analysis of the 350°C anneal shows unreacted Pt and and additional polycrystalline phases, with no observed orientation relationship with the substrate. The Pt layer has been completely consumed by 400°C, with a uniform reacted layer indicated by RBS. At high temperatures (between 500°C and 600°C), the reaction products are PtIn 2 and PtP 2 . The two phases show a tendency for phase separation, with a higher concentration of PtP 2 at the InP/reacted layer interface. The phosphide phase also shows a preferred orientation relationship with the substrate." @default.
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- W2081234023 date "1989-01-01" @default.
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- W2081234023 title "Phase Formation in the Pt/Inp Thin Film System" @default.
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- W2081234023 doi "https://doi.org/10.1557/proc-148-47" @default.
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