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• W2081311093 abstract "Abstract The nucleation of precipitates and the precipitation process are studied in AlGe (0.2 and 1.2 at.%) and AlSi (0.5 at.%) by positron lifetime and angular correlation measurements during post-quench isochronal annealing. In the as-quenched samples small clusters of vacancies and solute atoms are observed. The vacancies disappear during first annealing steps, thereafter positrons are localized at incoherent Ge and Si particle-matrix interfaces. In AlGe (1.2 at.%) and in AlSi (0.5 at.%) above 150°C an increasing number of positrons are trapped by precipitates. Above 250°C the coarsening and dissolution of precipitates is detected. The density of Ge or Si particles estimated from the positron trapping rate agrees well with earlier SAXS and TEM results." @default.
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• W2081311093 date "1986-04-01" @default.
• W2081311093 modified "2023-09-24" @default.
• W2081311093 title "A positron study of precipitation phenomena in AlGe and AlSi alloys" @default.
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• W2081311093 doi "https://doi.org/10.1016/0001-6160(86)90181-1" @default.
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