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• W2081345744 abstract "Abstract We present a new approach for calculating generalized stacking-fault energies, which allows for in-plane relaxation of atoms. When applied to the {112} slip plane in hcp materials, our approach predicts that a stable stacking fault occurs, associated with a slip of 1/6 (11 ) ≡ ½ (c + a). This is consistent with the edge dislocation with b = (c + a) breaking into two partial dislocations, each with b = 1/2 (c + a), observed in previous simulations of the dislocation cores. The resulting generalized stacking-fault energy profile may be useful in understanding the competition between {112} (11 ) twinning (observed in Zr and Ti) and the related slip mode, observed in Mg, Co and Zn." @default.
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• W2081345744 date "1997-11-01" @default.
• W2081345744 modified "2023-09-29" @default.
• W2081345744 title "Prediction of a {1122} hcp stacking fault using a modified generalized stacking-fault calculation" @default.
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• W2081345744 doi "https://doi.org/10.1080/01418619708200015" @default.
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