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• W2081363400 abstract "Typical methods for sub- compound semiconductor patterning are based on indirect pattern transfer using or as intermediate masks, which inevitably increase the complexity of pattern transfer and cause potential damage to samples. We present an approach of direct pattern transfer using sol-gel-derived resist as mask. The optimal dose of resist for E-beam lithography is . The sample InP compound semiconductor etching selectivity to resist is as high as 9:1 with aspect ratio of over 30:1. Various sub- scale inductively coupled plasma etching patterns are obtained with a high-quality etching profile. The smallest feature is as small as wide with a depth of over ." @default.
• W2081363400 created "2016-06-24" @default.
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• W2081363400 date "2008-01-01" @default.
• W2081363400 modified "2023-09-24" @default.
• W2081363400 title "Sub-100 nm Nanolithography and Pattern Transfer on Compound Semiconductor Using Sol-Gel-Derived TiO[sub 2] Resist" @default.
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• W2081363400 doi "https://doi.org/10.1149/1.2883730" @default.
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