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- W2081448013 abstract "A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(VGa)=1.024(1). The VGa concentration increases up to 1018 cm−3 by decreasing the growth temperature to 200 °C. The vacancy concentration can account for the compensation of AsGa+ antisites as was previously assumed." @default.
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- W2081448013 date "1997-08-04" @default.
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- W2081448013 title "Ga vacancies in low-temperature-grown GaAs identified by slow positrons" @default.
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- W2081448013 doi "https://doi.org/10.1063/1.119814" @default.
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