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• W2081479618 endingPage "515~520" @default.
• W2081479618 startingPage "515~520" @default.
• W2081479618 abstract "We fabricated 10 nm-<TEX>$TiO_2$</TEX> thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of <TEX>$150^{circ};and;250^{circ}$</TEX>. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the <TEX>$TiO_2$</TEX> using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform <TEX>$TiO_2$</TEX> thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric <TEX>$TiO_2$</TEX> phase was formed and confirmed by measuring main characteristic peaks of Ti <TEX>$2p^1$</TEX>, Ti <TEX>$2p^3$</TEX>, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-<TEX>$TiO_2$</TEX> thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional <TEX>$TiO_2$</TEX> films had a band gap of 3.0 eV (rutile)<TEX>${sim}$</TEX>3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick <TEX>$TiO_2$</TEX> film using an ALD process at <TEX>$150^{circ}$</TEX> had almost the same properties as thsose of film at <TEX>$250^{circ}$</TEX>. Therefore, we confirmed that the ALD-processed <TEX>$TiO_2$</TEX> thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices." @default.
• W2081479618 created "2016-06-24" @default.
• W2081479618 creator A5019206284 @default.
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• W2081479618 date "2008-10-01" @default.
• W2081479618 modified "2023-09-23" @default.
• W2081479618 title "Property of the Nano-Thick TiO₂Films Using an ALD at Low Temperature" @default.
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• W2081479618 doi "https://doi.org/10.3740/mrsk.2008.18.10.515" @default.
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