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• W2081529663 abstract "Abstract In recent years it has been largely demonstrated that hydrogen can be used to saturate dangling bonds in amorphous silicon, so that this element has been chosen to passivate the grain boundaries in polysilicon materials. Low energy (about 1 keV) proton implantation, generally with a Kaufman type ion source, constitutes one of the techniques used to introduce hydrogen into the substrate. In this paper, we will show that, besides the many advantages of this procedure, some drawbacks also exist, especially: 1) the generation of recombination centers in the surface vicinity, ii) a reduction of the active concentration of the dopant in the front layer of the cell. In order to understand the role of this element on the silicon lattice it is important to know the effective distribution of the hydrogen atoms." @default.
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• W2081529663 date "1985-03-01" @default.
• W2081529663 modified "2023-10-18" @default.
• W2081529663 title "Some problems arising in hydrogen passivation of silicon by ion bombardment techniques" @default.
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• W2081529663 doi "https://doi.org/10.1016/0168-583x(85)90570-1" @default.
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