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• W2081545842 abstract "We have studied the effect of Tellurium (Te) impurity on morphology of GaSb epilayer grown on GaSb (001) circular patterned substrates by liquid phase epitaxy. The results of the Te doped GaSb epilayers have been compared with the undoped GaSb epilayer under identical growth conditions. After the addition of Te impurity up to 0.12mol% in the starting solution, it is observed that a (311)B facet is formed instead of a (111)B facet while there is no such transition in the (111)A facet. The reason for the transition of the (111)B facet to the (311)B is discussed and an atomic model is proposed to explain the transition of the facet. The cross-sectional (110) plane of the Te doped GaSb epilayer after stain etching in a permanganate etchant reveals that two boundaries are separating differently doped upper and lateral regions of the epilayer. Furthermore, a few Te impurity striations are observed in the lateral region of the epilayer but none are found in the upper region. The growth time dependence of the morphology of Te doped GaSb epilayer shows that the (311)B facet is initially formed and becomes dominant after three hours growth." @default.
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• W2081545842 date "2004-12-27" @default.
• W2081545842 modified "2023-10-16" @default.
• W2081545842 title "Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy" @default.
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• W2081545842 doi "https://doi.org/10.1063/1.1834723" @default.
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