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• W2081569473 abstract "Changes of the work function of contact metal and the atomic composition at the vicinity of metal/GaN interface were studied in in situ annealed Ti on n-type GaN using synchrotron radiation photoemission spectroscopy. Ti layer transformed to TiN and its work function increased as annealing temperature increased. Meanwhile, the atomic composition ratio of Ga-to-N below the TiN contact increased indicating the creation of N vacancies. This provides evidence that N vacancies produced below the contact, acting as donors for electrons, play a main role in forming the Ohmic contact." @default.
• W2081569473 created "2016-06-24" @default.
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• W2081569473 date "2002-05-20" @default.
• W2081569473 modified "2023-09-23" @default.
• W2081569473 title "Mechanism for Ohmic contact formation of Ti on <i>n</i>-type GaN investigated using synchrotron radiation photoemission spectroscopy" @default.
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• W2081569473 doi "https://doi.org/10.1063/1.1476085" @default.
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