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- W2081663655 abstract "We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation process at temperatures around 1000 °C according to Auger Electron Spectroscopy. This allows for separate, non-thermal control of the rate of formation of the interfacial buffer layer formation to yield reduced pit formation observed by scanning tunneling microscopy during subsequent UHV graphene growth." @default.
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- W2081663655 date "2013-05-01" @default.
- W2081663655 modified "2023-09-26" @default.
- W2081663655 title "Improved graphene growth in UHV: Pit-free surfaces by selective Si etching of SiC(0001)–Si with atomic hydrogen" @default.
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- W2081663655 doi "https://doi.org/10.1016/j.susc.2013.01.010" @default.
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