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- W2082019250 abstract "A planar metal/semiconductor/metal structure with Schottky barriers at both ends has attracted much attention as a competitive photodetector in an optical signal processing system. We report the influence of operating conditions on the low frequency (100 Hz–2 MHz) optical response of molybdenum/n-type silicon/molybdenum structure having a long undepleted neutral region. It was found that the spectra of the photoresponse of this structure displayed an appreciable change due to biasing conditions. An explanation for these results was given. Further, numerical simulations were performed using its equivalent circuit model. A good agreement between the simulated and observed results was obtained." @default.
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- W2082019250 date "2002-09-01" @default.
- W2082019250 modified "2023-09-30" @default.
- W2082019250 title "Intrinsic and extrinsic photoresponse of Mo/n-Si/Mo structures with wide electrode gap" @default.
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- W2082019250 doi "https://doi.org/10.1016/s0038-1101(02)00084-9" @default.
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