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- W2082036382 abstract "Comparative study on NBTI and hot carrier effects of p-channel MOSFETs fabricated by using strained SOI wafer and unstrained SOI wafer has been performed, respectively. It is observed that NBTI and hot carrier degradation are more significant in strained SOI devices compared with unstrained SOI devices. Since the devices fabricated in strained SOI wafer are SiGe free strained devices, the more generation of interface states during gate oxidation is the main cause for enhanced NBTI and hot carrier degradation in strained SOI devices." @default.
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- W2082036382 date "2009-09-01" @default.
- W2082036382 modified "2023-09-24" @default.
- W2082036382 title "NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer" @default.
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- W2082036382 doi "https://doi.org/10.1016/j.microrel.2009.06.015" @default.
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