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- W2082054241 abstract "This letter examined the insertion effect of thermal <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{TiO}_{2}$</tex> </formula> films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{TiO}_{x}$</tex></formula> device inserted at the ZTO/silicon nitride <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$(hbox{SiN}_{x})$</tex></formula> interface exhibited slightly lower mobility (9.4 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{cm}^{2}/hbox{V}cdot hbox{s}$</tex> </formula> ) compared with that (14.1 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{cm}^{2}/hbox{V}cdot hbox{s}$</tex> </formula> ) of the reference device with a ZTO/ <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{SiN}_{x}$</tex></formula> stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{TiO}_{x}$</tex></formula> -inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{TiO}_{x}$</tex></formula> and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{SiN}_{x}$ </tex></formula> bulk region." @default.
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- W2082054241 date "2013-02-01" @default.
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- W2082054241 title "Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO<sub>x</sub>films" @default.
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